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Same model may have multiple batches, images only for reference.
TK14N65W5,S1F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK14N65W5,S1F

Part No TK14N65W5,S1F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 13.7A TO-247 / Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-247 Tube
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 690μA
Gate Charge (Qg) (Maximum) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1300pF @ 300V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 130W (Tc)
Rds On (Maximum) @ Id, Vgs 300 mOhm @ 6.9A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Win Source Part Number 796828-TK14N65W5,S1F
Popularity Medium
Supply and Demand Status Limited
Family Name TK14N65W5
ECCN EAR99
Country of Origin China
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK14N65W5,S1F CAD Model

Description

The Toshiba Semiconductor and Storage electronic component with Win Source Part Number 796828-TK14N65W5,S1F belongs to the DTMOSIV series and is a MOSFET technology product.

  • Current - continuous drain (Id) @ 25°C: 13.7A (Ta)
  • Maximum power dissipation: 130W (Tc)
  • Packaging: TO-247-3
  • Operating temperature range: 150°C (TJ)
  • Manufacturer homepage: www.toshiba.semicon-storage.com

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Quantity Unit Price Ext. Price
2+ $29.1522 $58.3044
5+ $23.9201 $119.6005
8+ $23.1728 $185.3824
11+ $22.4255 $246.6805
14+ $21.6782 $303.4948
18+ $19.4352 $349.8336
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