The TK20V60W5 is a power MOSFET manufactured by Toshiba Semiconductor and Storage. This N-channel MOSFET is designed for high-efficiency switching applications, such as power supplies and motor control circuits. Its low on-resistance and fast switching speed make it suitable for applications requiring high performance and reliability.

Applications

• Switching power supplies (SMPS)
• Motor control circuits
• DC-DC converters
• Uninterruptible power supplies (UPS)
• Power inverters

Features

• Low on-resistance (RDS(on)): Minimizes conduction losses, increasing efficiency.
• High voltage rating (VDS): Suitable for high-voltage applications.
• Fast switching speed: Reduces switching losses and improves performance.
• Avalanche rated: Withstands transient voltage spikes, enhancing reliability.
• Easy gate drive: Simplifies circuit design and implementation.

Benefits

• Increased power efficiency: Low RDS(on) and fast switching speed contribute to reduced power consumption.
• Enhanced system reliability: Avalanche rating provides protection against voltage transients.
• Simplified circuit design: Easy to drive, reducing design complexity.
• Reduced heat generation: Lower on-resistance minimizes heat dissipation.
• High Power Density: Can handle significant power levels in a compact package.

Additional Details

The TK20V60W5 has a drain-source voltage (VDS) rating of 600 V and a continuous drain current (ID) of 20 A. The on-resistance (RDS(on)) is typically 0.165 Ohms at VGS = 10 V. The gate threshold voltage (VGS(th)) is typically between 2 V and 4 V. It's offered in a TO-247 package. The operating temperature range is -55°C to +150°C. It exhibits excellent avalanche ruggedness, enhancing its reliability. The device is RoHS compliant.