The Toshiba Semiconductor and Storage MOSFET is a N-Channel polarity transistor that has a maximum power dissipation of 30W (Tc).

• GPTDescription: It is mounted through hole with a TO-220SIS case/package and has a drain-source breakdown voltage of 650V.
• GPTDescription: It has a maximum Rds On @ Id,Vgs of 3.26 Ohm @ 1A, 10V and a gate-source threshold voltage of 4.4V @ 1mA.
• GPTDescription: The maximum gate charge is 9nC @ 10V and the maximum input capacitance is 380pF @ 25V.
• GPTDescription: The supply and demand status is balanced.