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Same model may have multiple batches, images only for reference.
TK50P04M1(T6RSS-Q) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK50P04M1(T6RSS-Q)

Part No TK50P04M1(T6RSS-Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 50A DP TO252-3
Datasheet
TK50P04M1(T6RSS-Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 500μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 2600pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 8.7 mOhm @ 25A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package DP
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 100402-TK50P04M1(T6RSS-Q)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TK50P04M1(T6RSS-Q) CAD Model

Description

The TK50P04M1(T6RSS-Q) is a 40V N-Channel MOSFET from Toshiba Semiconductor and Storage.

  • It is designed to operate with a voltage range of 4.5V to 10V, making it ideal for use in a wide range of applications.
  • The MOSFET has a maximum power dissipation of 60W (Tc), which makes it suitable for use in high-power applications.
  • The TK50P04M1(T6RSS-Q) is available in a DPak package, making it easy to integrate into your design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5735 $51.6150
215+ $0.4706 $101.1790
330+ $0.4559 $150.4470
455+ $0.4412 $200.7460
590+ $0.4265 $251.6350
785+ $0.3824 $300.1840
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Availability: 6,020 pieces
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