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Same model may have multiple batches, images only for reference.
TK5A55D Real Image
Same model may have multiple batches, images only for reference.

TK5A55D

Part No TK5A55D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 5A TO-220SIS
Datasheet
TK5A55D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 540pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 1.7 Ohm @ 2.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 212904-TK5A55D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK5A55D CAD Model

Description

This electronic component is a MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Its Win Source Part Number is 212904-TK5A55D and it is categorized as a Discrete Semiconductor Product.
  • It is a N-Channel polarity and has a maximum power dissipation of 35W (Tc).
  • The supply and demand status is balanced.
  • It has a Through Hole mounting and comes in a TO-220SIS package.
  • The drain-source breakdown voltage is 550V and it has a continuous drain current of 5A (Ta) @ 25°C.

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