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TK5P65W,RQ

Part No TK5P65W,RQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description PB-F POWER MOSFET TRANSISTOR DPA
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.22Ohm @ 2.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 300 V
Power Dissipation (Max) 60W (Tc)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 2,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1010575-TK5P65W,RQ
Ultra Librarian 3D Model Ultra Librarian TK5P65W,RQ CAD Model

Description

The TK5P65W,RQ is an N-channel MOSFET transistor from the DTMOSIV series.

  • Series: DTMOSIV
  • Channel Type: N-channel
  • Application: Discrete semiconductor applications
  • Drain-to-Source Voltage: 650V
  • Continuous Drain Current: 5.2A
  • Maximum Rds On: 1.22Ohm
  • Gate Threshold Voltage: 3.5V
  • Power Dissipation: 60W
  • Mounting Type: Surface mount
  • Temperature Range: Up to 150°C
  • Reliability: Reliable and efficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5865 $52.7850
210+ $0.4813 $101.0730
325+ $0.4662 $151.5150
445+ $0.4512 $200.7840
575+ $0.4361 $250.7575
770+ $0.3910 $301.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,395 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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