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Same model may have multiple batches, images only for reference.
TK70A06J1(Q)
Same model may have multiple batches, images only for reference.

TK70A06J1(Q)

Part No TK70A06J1(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 60V 70A 3-Pin(3+Tab) TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-220-3
Continuous Drain Current (ID) 70 A
Drain to Source Breakdown Voltage 60 V
Drain to Source Resistance 6.4 mΩ
Drain to Source Voltage (Vdss) 60 V
Element Configuration Single
Fall Time 106 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 5.45 nF
Lead Free Yes
Maximum Operating Temperature 150 °C
Max Power Dissipation 45 W
Min Operating Temperature -55 °C
Mount Through Hole
Power Dissipation 45 W
Rds On Max 6.4 mΩ
Rise Time 24 ns
RoHS Compliant
Turn-Off Delay Time 21 ns
Win Source Part Number 1019259-TK70A06J1(Q)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TK70A06J1(Q) CAD Model

Description

The Toshiba Semiconductor and Storage 1019259-TK70A06J1(Q) is a powerful MOSFET transistor with a drain to source voltage of 60V and a continuous drain current of 70A.

  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 70A
  • Rise Time: 24ns
  • Fall Time: 106ns
  • On-Resistance: 6.4mΩ
  • Power Dissipation: 45W
  • Package: TO-220-3
  • Mounting: Easy to mount on a circuit board
  • Compliance: Lead-free and RoHS compliant

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