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Same model may have multiple batches, images only for reference.
TPC8035-H(TE12L,QM Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC8035-H(TE12L,QM

Part No TPC8035-H(TE12L,QM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 18A 8SOP  /  N-Channel 30 V 18A (Ta) 1W (Ta) Surface Mount 8-SOP (5.5x6.0)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI-H
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7800 pF @ 10 V
Power Dissipation (Max) 1W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOP (5.5x6.0)
Package / Case 8-SOIC (0.173", 4.40mm Width)
Base Product Number TPC8035
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names TPC8035-HTE12LQMDKR,TPC8035HTE12LQM,TPC8035-HTE12LQMTR,TPC8035-HTE12LQMCT,TPC8035-H(TE12L,QM-ND
Standard Package 3,000
Win Source Part Number 1100761-TPC8035-H(TE12L,QM
Ultra Librarian 3D Model Ultra Librarian TPC8035-H(TE12L,QM CAD Model

Description

This MOSFET transistor is part of the U-MOSVI-H series manufactured by Toshiba Semiconductor and Storage.

  • Maximum Drain to Source Voltage: 30V
  • Continuous Drain Current: 18A @ 25°C
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 9A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
  • Maximum Vgs: ±20V
  • Operating Temperature: up to 150°C

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