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TPCA8003-H(TE12LQM

Part No TPCA8003-H(TE12LQM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A SOP-8 ADV
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1465pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 6.6 mOhm @ 18A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 1111112-TPCA8003-H(TE12LQM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCA8003-H(TE12LQM CAD Model

Description

The TPCA8003-H(TE12LQM is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It is designed for load switching and power management applications, offering low on-resistance and fast switching speeds. This MOSFET is particularly well-suited for use in portable devices and other applications where efficiency and space are critical.

Applications

  • Load Switching
  • Power Management in Portable Devices
  • Battery Protection Circuits
  • DC-DC Converters
  • High-Side Switching

Features

  • Low On-Resistance (Rds(on)): Reduces conduction losses and improves efficiency.
  • Fast Switching Speed: Enables high-frequency operation and reduces switching losses.
  • Small SOP-8 Package: Compact surface-mount package for space-constrained applications.
  • P-Channel MOSFET: Suitable for high-side switching applications.
  • Low Voltage Drive: Can be driven by low-voltage logic circuits.

Benefits

  • Increased Efficiency: Low on-resistance minimizes power losses and improves overall system efficiency.
  • Reduced Component Size: Small package size allows for compact circuit designs.
  • Simplified Circuit Design: Easy to integrate into existing and new designs.
  • Improved Battery Life: Lower power consumption extends the operating time of battery-powered devices.
  • Enhanced System Performance: Fast switching speed enables high-frequency operation.

Additional Details

The TPCA8003-H(TE12LQM has a drain-source voltage (Vds) rating of -30V and a continuous drain current (Id) of -4.5A (at a case temperature of 25°C). The low Rds(on) value helps to minimize conduction losses, and the fast switching speed reduces switching losses. The device is designed for low-voltage gate drive, making it compatible with microcontroller and other low-voltage control circuits. It is typically packaged in a SOP-8 package. Toshiba's TPCA series of MOSFETs is known for its high performance and reliability in power management applications. The combination of low on-resistance, fast switching speed, and small package size makes the TPCA8003-H(TE12LQM a suitable choice for a wide range of portable and battery-powered applications.

The MOSFET is commonly used in load switching applications to control the power supply to different parts of a circuit. It can be used in power management applications to regulate the voltage or current flowing to different components. It is also suitable for battery protection circuits, where it can be used to disconnect the battery from the circuit in the event of an overvoltage or undervoltage condition. The TPCA8003-H(TE12LQM can also be used in DC-DC converters to efficiently convert one voltage level to another. As a P-channel MOSFET, it is particularly well-suited for high-side switching applications, where it can be used to switch the power supply on and off to a load. The low voltage drive capability simplifies the design of the driving circuit and reduces the overall system cost.

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