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Same model may have multiple batches, images only for reference.
TPCA8102-TE12L
Same model may have multiple batches, images only for reference.

TPCA8102-TE12L

Part No TPCA8102-TE12L
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 40A SOP-8 ADV
Datasheet
TPCA8102-TE12L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 109nC @ 10V
Max Input Capacitance 4600pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 20A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 056445-TPCA8102-TE12L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCA8102-TE12L CAD Model

Description

The Toshiba Semiconductor and Storage P-Channel MOSFET is a high-performance electronic component designed for use in various applications.

  • Maximum Power Dissipation: 1.6W (Ta) and 45W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 40A (Ta)
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Gate Charge: 109nC @ 10V
  • Package: 8-SOP Advance (5x5)
  • Dimension: 8-PowerVDFN
  • Supply and Demand Status: The supply and demand status is balanced.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6124 $64.4960
90+ $1.3225 $119.0250
140+ $1.2821 $179.4940
190+ $1.2405 $235.6950
245+ $1.1989 $293.7305
325+ $1.0753 $349.4725
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,740 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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