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Same model may have multiple batches, images only for reference.
IRF630STRRPBF
Same model may have multiple batches, images only for reference.

IRF630STRRPBF

Part No IRF630STRRPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9A D2PAK
Datasheet
IRF630STRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 74W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 5.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 126311-IRF630STRRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF630STRRPBF CAD Model

Description

The Vishay IRF630STRRPBF is an N-Channel MOSFET with a drain-source breakdown voltage of 200V and a continuous drain current of 9A @ 25°C.

  • Maximum Rds On at Id,Vgs: 400 mOhm @ 5.4A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 43nC @ 10V
  • Maximum Input Capacitance: 800pF @ 25V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Drive Voltage: 10V
  • Power Dissipation: 3W (Ta), 74W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: D2PAK (TO-263)
  • Suitable for: Discrete semiconductor products

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