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Same model may have multiple batches, images only for reference.
IRF820SPBF Real Image
Same model may have multiple batches, images only for reference.

IRF820SPBF

Part No IRF820SPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 2.5A D2PAK
Datasheet
IRF820SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 360pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017540-IRF820SPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF820SPBF CAD Model

Description

The Vishay N-channel MOSFET is a high-quality electronic component that is designed to deliver reliable performance.

  • Power Dissipation: 3.1W (Ta), 50W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Mounting: SMD (SMT)
  • Packaging: Tube/rail
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Category: Discrete Semiconductor Products
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 2.5A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 24nC @ 10V
  • Maximum Input Capacitance: 360pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 3 Ohm @ 1.5A, 10V

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