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Same model may have multiple batches, images only for reference.
IRF9630SPBF Real Image
Same model may have multiple batches, images only for reference.

IRF9630SPBF

Part No IRF9630SPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 6.5A D2PAK
Datasheet
IRF9630SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 74W (Tc)
Maximum Rds On at Id,Vgs 800 mOhm @ 3.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046786-IRF9630SPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF9630SPBF CAD Model

Description

The IRF9630SPBF is a P-channel MOSFET transistor manufactured by Vishay.

  • Applications: High voltage, high speed power switching
  • Popularity Rating: Medium
  • Maximum Power Dissipation: 3W (Ta) and 74W (Tc)
  • Package: D2PAK
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 6.5A (Tc)
  • Maximum Gate-Source Voltage: +/-20V
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5818 $55.3630
80+ $1.2979 $103.8320
120+ $1.2574 $150.8880
165+ $1.2168 $200.7720
215+ $1.1763 $252.9045
285+ $1.0546 $300.5610
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,040 pieces
MOQ: 35 pcs
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