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IRFD420PBF

Part No IRFD420PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 370MA 4-DIP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 370mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 360pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 3 Ohm @ 220mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package 4-DIP, Hexdip, HVMDIP
Dimension 4-DIP (0.300", 7.62mm)
Win Source Part Number 140243-IRFD420PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFD420PBF CAD Model

Description

The electronic component with Id 167542 is a MOSFET manufactured by Vishay.

  • Win Source Part Number: 140243-IRFD420PBF
  • Mounting Technology: through-hole
  • Category: Discrete Semiconductor Products
  • Family: FETs - Single
  • Maximum Power Dissipation: 1W (Ta)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 370mA (Ta)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id, Vgs: 3 Ohm @ 220mA, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 24nC @ 10V
  • Maximum Input Capacitance: 360pF @ 25V
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9448 $51.9640
130+ $0.7753 $100.7890
200+ $0.7510 $150.2000
280+ $0.7268 $203.5040
360+ $0.7026 $252.9360
480+ $0.6299 $302.3520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,600 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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