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Same model may have multiple batches, images only for reference.
IRFI840GPBF Real Image
Same model may have multiple batches, images only for reference.

IRFI840GPBF

Part No IRFI840GPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 500V 4.6A 3-Pin(3+Tab) TO-220FP / MOSFET N-CH 500V 4.6A TO220FP
Datasheet
IRFI840GPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 67nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 850 mOhm @ 2.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 017610-IRFI840GPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRFI840G
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IRFI840GPBF CAD Model

Description

The IRFI840GPBF is an N-channel MOSFET that is designed for use in applications that require high power dissipation and high voltage breakdown.

  • Maximum Power Dissipation: 40 W
  • Drain-Source Breakdown Voltage: 500 V
  • Temperature Range: -55°C to 150°C
  • Maximum Gate-Source Voltage: ±20 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4338 $50.1830
85+ $1.1765 $100.0025
135+ $1.1397 $153.8595
185+ $1.1030 $204.0550
235+ $1.0662 $250.5570
315+ $0.9559 $301.1085
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,380 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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