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Same model may have multiple batches, images only for reference.
IRFZ30PBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ30PBF

Part No IRFZ30PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 30A TO-220AB
Datasheet
IRFZ30PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 50 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017730-IRFZ30PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFZ30PBF CAD Model

Description

The Vishay IRFZ30PBF is an N-channel MOSFET that is part of the TO-220AB series.

  • Breakdown Voltage: 50V
  • Continuous Drain Current: 30A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 30nC @ 10V
  • Maximum Input Capacitance: 1600pF @ 25V
  • Maximum Rds On: 50 mOhm @ 16A, 10V
  • Package: tube/rail
  • Mounting: through-hole technology
  • Operating Temperature Range: -55°C to 150°C
  • Market Popularity: popular with a balanced supply and demand status
  • Ideal for: use in various electronic applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $20.4031 $61.2093
7+ $16.7406 $117.1842
11+ $16.2174 $178.3914
15+ $15.6941 $235.4115
20+ $15.1709 $303.4180
26+ $13.6024 $353.6624
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,910 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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