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Same model may have multiple batches, images only for reference.
IRL640STRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRL640STRLPBF

Part No IRL640STRLPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 17A D2PAK
Datasheet
IRL640STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 66nC @ 5V
Max Input Capacitance 1800pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 3.1W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 10A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017751-IRL640STRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL640STRLPBF CAD Model

Description

The Vishay IRL640STRLPBF is a N-Channel MOSFET with a drain-source breakdown voltage of 200V and continuous drain current of 17A (Tc).

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 17A (Tc)
  • Maximum Rds On at Id,Vgs: 180 mOhm @ 10A, 5V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate-Source Voltage: ±10V
  • Maximum Gate Charge: 66nC @ 5V
  • Power Dissipation: 3.1W (Ta), 125W (Tc)
  • Package: D2PAK

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9324 $52.7832
42+ $2.4061 $101.0562
65+ $2.3309 $151.5085
89+ $2.2557 $200.7573
115+ $2.1805 $250.7575
154+ $1.9549 $301.0546
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Availability: 2,540 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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