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Same model may have multiple batches, images only for reference.
SI1032X-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1032X-T1-E3

Part No SI1032X-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 200MA SC89-3
Datasheet
SI1032X-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 0.75nC @ 4.5V
Maximum Gate-Source Voltage ±6V
Power Dissipation (Max) 300mW (Ta)
Maximum Rds On at Id,Vgs 5 Ohm @ 200mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-3
Dimension SC-89, SOT-490
Win Source Part Number 096691-SI1032X-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1032X-T1-E3 CAD Model

Description

The Vishay 096691-SI1032X-T1-E3 MOSFET is an N-channel device that is designed for use in SMD (SMT) mounting applications.

  • Manufacturer: Vishay
  • Product Name: 096691-SI1032X-T1-E3
  • Drain-Source Voltage (Max): 20V
  • Continuous Drain Current @ 25°C: 200mA
  • Maximum Rds On: 5 Ohm @ 200mA and 4.5V
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Gate Charge: 0.75nC @ 4.5V
  • Maximum Gate-Source Voltage: ±6V
  • Input Capacitance: Not specified
  • Package: SC-89-3
  • Packaging: Reel

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