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Same model may have multiple batches, images only for reference.
SI1056X-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1056X-T1-GE3

Part No SI1056X-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V SC-89-6
Datasheet
SI1056X-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 8.7nC @ 5V
Max Input Capacitance 400pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 236mW (Ta)
Maximum Rds On at Id,Vgs 89 mOhm @ 1.32A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Dimension SOT-563, SOT-666
Win Source Part Number 1095671-SI1056X-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1056X-T1-GE3 CAD Model

Description

The Vishay MOSFET is a high-performance N-channel MOSFET that is designed to operate in a wide range of applications.

  • Drain-Source Breakdown Voltage: 20V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On @ Id,Vgs: 89 mOhm @ 1.32A, 4.5V
  • Package: SC-89-6 case
  • Dimensions: SOT-563 and SOT-666
  • Power Dissipation: 236mW (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Ideal for: use in a variety of applications, including discrete semiconductor products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.7233 $60.5097
21+ $5.5174 $115.8654
33+ $5.3442 $176.3586
45+ $5.1721 $232.7445
58+ $5.0000 $290.0000
78+ $4.4826 $349.6428
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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