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SI1071X-T1-E3

Part No SI1071X-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 0.96A SOT563F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.45V @ 250μA
Max Gate Charge 13.3nC @ 10V
Max Input Capacitance 315pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 236mW (Ta)
Maximum Rds On at Id,Vgs 167 mOhm @ 960mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Dimension SOT-563, SOT-666
Win Source Part Number 130311-SI1071X-T1-E3
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian SI1071X-T1-E3 CAD Model

Description

The Vishay 130311-SI1071X-T1-E3 MOSFET is a P-Channel device with a drain-source breakdown voltage of 30V and a maximum Rds On of 167 mOhm at 960mA, 10V.

  • Manufacturer: Vishay
  • Product Name: 130311-SI1071X-T1-E3
  • Channel Type: P-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On: 167 mOhm @ 960mA, 10V
  • Gate-Source Threshold Voltage: 1.45V @ 250μA
  • Maximum Gate Charge: 13.3nC @ 10V
  • Package: SC-89-6 (SOT-563, SOT-666)
  • Application: Discrete Semiconductor Products
  • Power Dissipation: 236mW (Ta)
  • Temperature Range: -55°C to 150°C (TJ)
  • Drive Voltage: 2.5V, 10V
  • Status: obsolete (EOL)
  • Supply and Demand Status: limited
  • Quantity per package: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.3426 $58.2420
415+ $0.2811 $116.6565
640+ $0.2723 $174.2720
880+ $0.2636 $231.9680
1,135+ $0.2548 $289.1980
1,520+ $0.2285 $347.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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