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SI1967DH-T1-GE3

Part No SI1967DH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 1.3A SC70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.3A
Maximum Rds On at Id,Vgs 490 mOhm @ 910mA, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 4nC @ 8V
Max Input Capacitance 110pF @ 10V
Maximum Power Dissipation 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 028355-SI1967DH-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI1967DH-T1-GE3 CAD Model

Description

The Vishay SI1967DH-T1-GE3 is a 2 P-Channel (Dual) FET with a logic level gate feature.

  • Packaging: Reel - TR
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 1.25W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 1.3A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 4nC @ 8V
  • Maximum Input Capacitance: 110pF @ 10V
  • Maximum Rds On @ Id,Vgs: 490 mOhm @ 910mA, 4.5V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
275+ $0.1842 $50.6550
585+ $0.1724 $100.8540
905+ $0.1664 $150.5920
1,295+ $0.1545 $200.0775
1,685+ $0.1486 $250.3910
2,105+ $0.1427 $300.3835
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,000 pieces
MOQ: 275 pcs
Order Increment : 1 pcs
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