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SI2333DS-T1-GE3 Real Image SI2333DS-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.
SI2333DS-T1-GE3 Real Image SI2333DS-T1-GE3 Real Image
SI2333DS-T1-GE3 Real Image SI2333DS-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI2333DS-T1-GE3

Part No SI2333DS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 4.1A SOT23-3
Datasheet
SI2333DS-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 18nC @ 4.5V
Max Input Capacitance 1100pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 750mW (Ta)
Maximum Rds On at Id,Vgs 32 mOhm @ 5.3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1095747-SI2333DS-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI2333DS-T1-GE3 CAD Model

Description

The Vishay SI2333DS-T1-GE3 is a P-Channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Power Dissipation: 750mW @ Ta
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 4.1A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On @ Id,Vgs: 32 mOhm @ 5.3A, 4.5V
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3493 $50.6485
350+ $0.2866 $100.3100
545+ $0.2777 $151.3465
745+ $0.2687 $200.1815
965+ $0.2598 $250.7070
1,290+ $0.2329 $300.4410
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Availability: 5,410 pieces
MOQ: 145 pcs
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