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Same model may have multiple batches, images only for reference.
SI3458DV-T1 Real Image
Same model may have multiple batches, images only for reference.

SI3458DV-T1

Part No SI3458DV-T1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet N-ch 60V 3.2A 6-TSOP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Case / Package TSOP
Continuous Drain Current (ID) 3.2 A
Drain to Source Breakdown Voltage 60 V
Drain to Source Resistance 100 mΩ
Drain to Source Voltage (Vdss) 60 V
Element Configuration Single
Fall Time 10 ns
Gate to Source Voltage (Vgs) 20 V
Max Operating Temperature 150 °C
Max Power Dissipation 2 W
Min Operating Temperature -55 °C
Number of Channels 1
Power Dissipation 2 W
Rise Time 10 ns
RoHS Non-Compliant
Turn-Off Delay Time 20 ns
Turn-On Delay Time 10 ns
Weight 19.986414 mg
Win Source Part Number 1142695-SI3458DV-T1
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI3458DV-T1 CAD Model

Description

The Vishay SI3458DV-T1 is a high-performance MOSFET transistor that can handle a maximum drain-to-source voltage of 60 V and a continuous drain current of 3.2 A.

  • Maximum Drain-to-Source Voltage: 60 V
  • Continuous Drain Current: 3.2 A
  • Configuration: Single element
  • Drain-to-Source Resistance: 100 mΩ
  • Turn-On Delay Time: 10 ns
  • Turn-Off Delay Time: 20 ns
  • Power Dissipation: 2 W
  • Maximum Temperature: 150 °C
  • Case/Package: TSOP
  • Market Status: Popular

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8166 $61.2450
175+ $0.6699 $117.2325
270+ $0.6491 $175.2570
370+ $0.6283 $232.4710
480+ $0.6075 $291.6000
640+ $0.5440 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,587 pieces
MOQ: 75 pcs
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