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SI3460BDV-T1-GE3

Part No SI3460BDV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 8A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 24nC @ 8V
Max Input Capacitance 860pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2W (Ta), 3.5W (Tc)
Maximum Rds On at Id,Vgs 27 mOhm @ 5.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 042594-SI3460BDV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3460BDV-T1-GE3 CAD Model

Description

The electronic component with Id 328707 is a product from Vishay.

  • Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Temperature Range - operating: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 8A (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Max Gate Charge: 24nC @ 8V
  • Max Input Capacitance: 860pF @ 10V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On at Id,Vgs: 27 mOhm @ 5.1A, 4.5V
  • Supply and Demand Status: balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4090 $51.1250
300+ $0.3356 $100.6800
465+ $0.3252 $151.2180
640+ $0.3147 $201.4080
825+ $0.3042 $250.9650
1,105+ $0.2727 $301.3335
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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