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SI4114DY-T1-GE3

Part No SI4114DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 20A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 3700pF @ 10V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 2.5W (Ta), 5.7W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095896-SI4114DY-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4114DY-T1-GE3 CAD Model

Description

The electronic component with Id 432954 is a Vishay MOSFET product that comes in an 8-SO package.

  • Channel Polarity: N-Channel
  • Power Dissipation: 2.5W (Ta), 5.7W (Tc)
  • Supply and Demand: Sufficient
  • Category: Discrete Semiconductor Products
  • Drive Voltage: 4.5V, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5925 $55.7375
80+ $1.3067 $104.5360
120+ $1.2659 $151.9080
165+ $1.2250 $202.1250
215+ $1.1842 $254.6030
285+ $1.0617 $302.5845
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 350,002 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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