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SI4401DDY-T1-GE3

Part No SI4401DDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 40V 16.1A 8-Pin SOIC N T/R / MOSFET P-CH 40V 16.1A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 16.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 3007pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 6.3W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 10.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 092147-SI4401DDY-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name Si4401DDY
Introduction Date November 21, 2011
ECCN EAR99
Country of Origin China, Israel
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SI4401DDY-T1-GE3 CAD Model

Description

The Vishay MOSFET is a P-Channel technology MOSFET that comes in an 8-SO package.

  • Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 16.1A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate-Charge: 95nC @ 10V
  • Maximum Input Capacitance: 3007pF @ 20V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 15 mOhm @ 10.2A, 10V
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4402 $50.6230
280+ $0.3612 $101.1360
430+ $0.3499 $150.4570
595+ $0.3386 $201.4670
765+ $0.3273 $250.3845
1,025+ $0.2935 $300.8375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 42,558 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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