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SI4466DY-T1-GE3

Part No SI4466DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 9.5A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 60nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 9 mOhm @ 13.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095957-SI4466DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4466DY-T1-GE3 CAD Model

Description

The Vishay 1095957-SI4466DY-T1-GE3 is a MOSFET with N-channel polarity.

  • Polarity: N-Channel
  • Power Dissipation: 1.5W (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (25°C): 9.5A (Ta)
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Max Gate Charge: 60nC @ 4.5V
  • Rds On (Id, Vgs): 9 mOhm @ 13.5A, 4.5V
  • Maximum Gate-Source Voltage: ±12V
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Supply and Demand: Balanced
  • Lifecycle Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $33.6163 $67.2326
5+ $27.5826 $137.9130
7+ $26.7209 $187.0463
9+ $25.8581 $232.7229
12+ $24.9965 $299.9580
16+ $22.4105 $358.5680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,304 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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