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DXT5551P5-13

Part No DXT5551P5-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 160V 0.6A POWERDI5
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 160V
Max Vce (sat) 200mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Maximum Power Dissipation 2.25W
Frequency - Transition 130MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerDI 5
Win Source Part Number 1035635-DXT5551P5-13
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DXT5551P5-13 CAD Model

Description

Product Overview: DXT5551P5-13 from Diodes Incorporated

The DXT5551P5-13 is a high-performance NPN bipolar junction transistor (BJT) produced by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This transistor is designed to deliver efficient current handling and switching capabilities, making it an ideal choice for a wide range of electronic applications.

Key Features

  • High Current Gain Bandwidth Product: This transistor offers a high f<sub>T (transition frequency), which makes it suitable for high-frequency operations and amplification tasks in electronic circuits.
  • Low Collector-Emitter Saturation Voltage: The DXT5551P5-13 has a low V<sub>CE(sat), which means it requires less voltage to saturate, reducing power loss and improving efficiency in switching applications.
  • High Continuous Collector Current: It can handle a high I<sub>C (continuous collector current), providing robust performance for circuits that require high current flow.
  • RoHS Compliant: The product meets the Restriction of Hazardous Substances (RoHS) directive, ensuring that it is free from certain hazardous materials commonly used in electronics and electrical equipment.

Applications

The DXT5551P5-13 is versatile and can be used in various applications such as:

  • Switching regulators
  • Power management functions
  • Motor control circuits
  • Audio amplifiers
  • Signal amplification

Product Specifications

The DXT5551P5-13 comes in a SOT-23 package, which is compact and suitable for surface-mount technology (SMT) on printed circuit boards (PCBs). The transistor has a collector-base voltage (V<sub>CB) of 160V, a collector-emitter voltage (V<sub>CE) of 60V, and a continuous collector current (I<sub>C) rating of 1A. Its power dissipation is rated at 1W, which contributes to its ability to handle moderate power applications efficiently. The device also features a fast switching speed, which is critical for high-speed circuit operations.

For engineers and designers looking for a reliable and efficient NPN transistor, the DXT5551P5-13 from Diodes Incorporated offers an excellent balance of performance, power handling, and compact form factor. Its compliance with environmental standards also ensures that it is a sustainable choice for modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2056 $50.3720
520+ $0.1926 $100.1520
810+ $0.1861 $150.7410
1,160+ $0.1731 $200.7960
1,505+ $0.1666 $250.7330
1,875+ $0.1601 $300.1875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,262 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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