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Same model may have multiple batches, images only for reference.
SI4488DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4488DY-T1-GE3

Part No SI4488DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 3.5A 8-SOIC
Datasheet
SI4488DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Supply and Demand Status Limited
Popularity Medium
Win Source Part Number 142284-SI4488DY-T1-GE3
Dimension 8-SOIC (0.154", 3.90mm Width)
Case / Package 8-SO
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 50 mOhm @ 5A, 10V
Power Dissipation (Max) 1.56W (Ta)
Maximum Gate-Source Voltage ±20V
Max Gate Charge 36nC @ 10V
Gate-Source Threshold Voltage 2V @ 250μA (Min)
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 3.5A (Ta)
Drain-Source Breakdown Voltage 150V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Reel - TR
Manufacturer Vishay
Categories Discrete Semiconductor Products
Ultra Librarian 3D Model Ultra Librarian SI4488DY-T1-GE3 CAD Model

Description

The Vishay electronic component is a high-quality product that is designed to offer superior performance.

  • Supply and Demand Status: Limited
  • Polarity: N-channel
  • Power Dissipation: 1.56W (Ta)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 150V
  • Maximum Rds On: 50 mOhm @ 5A, 10V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1030 $55.1500
115+ $0.9051 $104.0865
175+ $0.8768 $153.4400
240+ $0.8485 $203.6400
305+ $0.8202 $250.1610
410+ $0.7354 $301.5140
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,890 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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