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Same model may have multiple batches, images only for reference.
SI4914BDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4914BDY-T1-E3

Part No SI4914BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8.4A 8-SOIC
Datasheet
SI4914BDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.4A, 8A
Maximum Rds On at Id,Vgs 21 mOhm @ 8A, 10V
Gate-Source Threshold Voltage 2.7V @ 250μA
Max Gate Charge 10.5nC @ 4.5V
Maximum Power Dissipation 2.7W, 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 064520-SI4914BDY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4914BDY-T1-E3 CAD Model

Description

The Vishay 064520-SI4914BDY-T1-E3 is a 2 N-Channel (Half Bridge) FET type electronic component that is part of the Discrete Semiconductor Products category.

  • Feature: standard FET
  • Status: currently active
  • Maximum Power Dissipation: 2.7W, 3.1W
  • Drain-Source Breakdown Voltage: 30V
  • Description: making it a reliable component for electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
220+ $0.2645 $58.1900
535+ $0.2171 $116.1485
825+ $0.2102 $173.4150
1,140+ $0.2033 $231.7620
1,475+ $0.1964 $289.6900
1,965+ $0.1767 $347.2155
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,600 pieces
MOQ: 220 pcs
Order Increment : 1 pcs
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