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SI4922BDY-T1-GE3 Real Image SI4922BDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.
SI4922BDY-T1-GE3 Real Image SI4922BDY-T1-GE3 Real Image
SI4922BDY-T1-GE3 Real Image SI4922BDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4922BDY-T1-GE3

Part No SI4922BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8A 8-SOIC
Datasheet
SI4922BDY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 16 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 2070pF @ 15V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1096035-SI4922BDY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4922BDY-T1-GE3 CAD Model

Description

The Vishay SI4922BDY-T1-GE3 is a dual N-channel standard FET from Vishay.

  • Series: Si4922BDY
  • Package: 8-SO
  • Power Dissipation: 3.1W (Max)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8A
  • Gate-Source Threshold Voltage: 1.8V @ 250μA
  • Gate Charge: 62nC (Max) @ 10V
  • Input Capacitance: 2070pF (Max) @ 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $29.1045 $58.2090
5+ $23.8806 $119.4030
7+ $23.1344 $161.9408
9+ $22.3881 $201.4929
12+ $21.6418 $259.7016
16+ $19.4030 $310.4480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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