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Same model may have multiple batches, images only for reference.
SI4942DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4942DY-T1-GE3

Part No SI4942DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 5.3A 8-SOIC
Datasheet
SI4942DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 5.3A
Maximum Rds On at Id,Vgs 21 mOhm @ 7.4A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 32nC @ 10V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 113177-SI4942DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4942DY-T1-GE3 CAD Model

Description

The Vishay SI4942DY-T1-GE3 is a dual N-channel logic level gate FET that is designed for use in various electronic applications.

  • Mounting: SMD (SMT)
  • Package: 8-SO
  • Maximum Power Dissipation: 1.1W
  • Continuous Drain Current: 5.3A @ 25°C
  • Drain-Source Breakdown Voltage: 40V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds on at Id, Vgs: 21 mOhm @ 7.4A and 10V
  • Status: suitable for use in discrete semiconductor products
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $3.0330 $60.6600
47+ $2.4890 $116.9830
72+ $2.4105 $173.5560
100+ $2.3331 $233.3100
129+ $2.2557 $290.9853
172+ $2.0224 $347.8528
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Availability: 3,560 pieces
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