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Same model may have multiple batches, images only for reference.
SI5463EDC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5463EDC-T1-GE3

Part No SI5463EDC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 62mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V
Vgs (Max) ±12V
Power Dissipation (Max) 1.25W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 1206-8 ChipFET™
Package / Case 8-SMD, Flat Lead
Base Product Number SI5463
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277900-SI5463EDC-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5463EDC-T1-GE3 CAD Model

Description

The SI5463EDC-T1-GE3 is a P-channel MOSFET transistor manufactured by Vishay Siliconix.

  • Drain-to-source voltage (Vdss): 20V
  • Continuous drain current (Id): 3.8A @ 25°C
  • Maximum on-resistance (Rds On): 62mOhm @ 4A and 4.5V
  • Gate charge (Qg): 15 nC @ 4.5V
  • Gate-source voltage (Vgs): ±12V
  • Operating temperature range: -55°C to 150°C
  • Package: Tape and reel
  • Mounting: Suitable for SMD (SMT) mounting
  • Ideal for: Various applications

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