The SI5475DC-T1-E3 is a P-Channel MOSFET manufactured by Vishay, which is widely used in Discrete Semiconductor Products.

• Drain-Source Breakdown Voltage: 12V
• Continuous Drain Current: 5.5A (Ta)
• Mounting: SMD (SMT)
• Power Dissipation: 1.3W (Ta)
• Gate-Source Threshold Voltage: 450mV @ 1mA (Min)
• Maximum Rds On at Id,Vgs: 31 mOhm @ 5.5A, 4.5V
• Case/Package: 1206-8 ChipFET
• Dimension: 8-SMD, Flat Lead
• Maximum Gate-Source Voltage: ±8V
• Maximum Gate Charge: 29nC @ 4.5V
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Threat of Fake Products: in the open market
• Supply and Demand Status: Sufficient