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Same model may have multiple batches, images only for reference.
SI5481DU-T1-GE3
Same model may have multiple batches, images only for reference.

SI5481DU-T1-GE3

Part No SI5481DU-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 22mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1610 pF @ 10 V
Power Dissipation (Max) 3.1W (Ta), 17.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® ChipFET™ Single
Package / Case PowerPAK® ChipFET™ Single
Base Product Number SI5481
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277499-SI5481DU-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5481DU-T1-GE3 CAD Model

Description

The SI5481DU-T1-GE3 is a P-channel MOSFET manufactured by Vishay.

  • Component: TrenchFET
  • Maximum Drain-to-Source Voltage: 20V
  • Continuous Drain Current: 12A
  • Power Dissipation: 3.1W
  • Gate Charge: 50 nC
  • Mounting: Surface-Mount Device
  • Operating Temperature: High Temperatures

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