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Same model may have multiple batches, images only for reference.
SI6463BDQ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI6463BDQ-T1-E3

Part No SI6463BDQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 6.2A 8-TSSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 60nC @ 5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.05W (Ta)
Maximum Rds On at Id,Vgs 15 mOhm @ 7.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 114301-SI6463BDQ-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6463BDQ-T1-E3 CAD Model

Description

The SI6463BDQ-T1-E3 is a P-Channel MOSFET manufactured by Vishay.

  • Application: Discrete semiconductor products
  • Supply and Demand Status: Balanced
  • Status: Obsolete (EOL)
  • Power Dissipation (max): 1.05W (Ta)
  • Drive Voltage (max Rds on, min Rds on): 1.8V, 4.5V
  • Technology: MOSFET
  • Polarity: P-Channel
  • Temperature Range: -55°C to 150°C (TJ)
  • Case / Package: 8-TSSOP
  • Dimension: 8-TSSOP (0.173", 4.40mm Width)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 6.2A (Ta)
  • Gate-Source Threshold Voltage @ 250μA: 800mV
  • Maximum Gate Charge @ 5V: 60nC
  • Maximum Input Capacitance: Not specified
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On @ Id,Vgs: 15 mOhm @ 7.4A, 4.5V

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Quantity Unit Price Ext. Price
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55+ $2.1129 $116.2095
85+ $2.0468 $173.9780
117+ $1.9808 $231.7536
151+ $1.9148 $289.1348
202+ $1.7167 $346.7734
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