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Same model may have multiple batches, images only for reference.
SI6469DQ-T1
Same model may have multiple batches, images only for reference.

SI6469DQ-T1

Part No SI6469DQ-T1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-Channel MOSFETs 8V 6A 1.5W
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSSOP
Continuous Drain Current (ID) 6 A
Drain to Source Breakdown Voltage 8 V
Drain to Source Resistance 28 mΩ
Element Configuration Single
Fall Time 30 ns
Gate to Source Voltage (Vgs) 8 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Power Dissipation 1.5 W
Rise Time 30 ns
RoHS Non-Compliant
Turn-Off Delay Time 85 ns
Win Source Part Number 980579-SI6469DQ-T1
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI6469DQ-T1 CAD Model

Description

The Vishay SI6469DQ-T1 is a Single MOSFET transistor designed for use in RF applications.

  • Continuous Drain Current: 6A
  • Drain to Source Breakdown Voltage: 8V
  • Rise Time: 30ns
  • Fall Time: 30ns
  • Drain to Source Resistance: 28mΩ
  • Power Dissipation: 1.5W
  • Turn-Off Delay Time: 85ns
  • Package: TSSOP
  • Maximum Temperature: 150°C
  • RoHS: Non-Compliant
  • Minimum Operating Temperature: -55°C

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