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Same model may have multiple batches, images only for reference.
SI7138DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7138DP-T1-E3

Part No SI7138DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 30A PPAK SO-8
Datasheet
SI7138DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 135nC @ 10V
Max Input Capacitance 6900pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.4W (Ta), 96W (Tc)
Maximum Rds On at Id,Vgs 7.8 mOhm @ 19.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 124797-SI7138DP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7138DP-T1-E3 CAD Model

Description

The Vishay SI7138DP-T1-E3 is a MOSFET with a Win Source Part Number of 124797-SI7138DP-T1-E3.

  • Polarity: N-channel
  • Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
  • Packaging: reel-TR
  • Case/Package: PowerPAK SO-8
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current at 25°C: 30A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 135nC @ 10V
  • Max Input Capacitance: 6900pF @ 30V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 7.8 mOhm @ 19.7A, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply: reel-TR package

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Quantity Unit Price Ext. Price
40+ $1.6309 $65.2360
90+ $1.3386 $120.4740
135+ $1.2959 $174.9465
185+ $1.2543 $232.0455
240+ $1.2128 $291.0720
320+ $1.0869 $347.8080
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