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SI7370ADP-T1-GE3

Name: SI7370ADP-T1-GE3
Brand: Vishay
SKU: 1092935
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	SI7370ADP-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 60V 50A PPAK SO-8 / N-Channel 60 V 50A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8
Datasheet	SI7370ADP-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	10mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2850 pF @ 30 V
Power Dissipation (Max)	5.2W (Ta), 69.4W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Base Product Number	SI7370
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000
Win Source Part Number	1092935-SI7370ADP-T1-GE3
Ultra Librarian 3D Model	Ultra Librarian SI7370ADP-T1-GE3 CAD Model

Alternative Products

Description

This is a TrenchFET® MOSFET transistor, which is a N-Channel FET type and comes with a PowerPAK® SO-8 package.

Drain to Source Voltage: 60V
Continuous Drain Current: 50A @ 25°C
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation: 5.2W (Ta), 69.4W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 30 V
Maximum Vgs: ±20V
Operating Temperature Range: -55°C ~ 150°C (TJ)
Manufacturer: Vishay Siliconix
Base Product Number: SI7370
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V

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