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Same model may have multiple batches, images only for reference.
SI7880ADP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7880ADP-T1-E3

Part No SI7880ADP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A PPAK SO-8
Datasheet
SI7880ADP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 125nC @ 10V
Max Input Capacitance 5600pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028681-SI7880ADP-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian SI7880ADP-T1-E3 CAD Model

Description

The Vishay 028681-SI7880ADP-T1-E3 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 5.4W (Ta), 83W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 40A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 125nC @ 10V
  • Maximum Input Capacitance: 5600pF @ 15V
  • Maximum Rds On @ Id,Vgs: 3 mOhm @ 20A, 10V
  • Package: PowerPAK SO-8
  • Quantity per Package: 3k pcs

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28+ $3.6195 $101.3460
43+ $3.5064 $150.7752
59+ $3.3933 $200.2047
77+ $3.2802 $252.5754
103+ $2.9409 $302.9127
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