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Same model may have multiple batches, images only for reference.
SI8435DB-T1-E1 Real Image
Same model may have multiple batches, images only for reference.

SI8435DB-T1-E1

Part No SI8435DB-T1-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 10A 2X2 4-MFP / Trans MOSFET P-CH Si 20V 6.72A 4-Pin Micro Foot T/R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type P
Technology MOSFET
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Vgs(th) (Maximum) @ Id 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 35nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 1600pF @ 10V
Vgs (Maximum) ±5V
Power Dissipation (Maximum) 2.78W (Ta), 6.25W (Tc)
Rds On (Maximum) @ Id, Vgs 41 mOhm @ 1A, 4.5V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 4-Microfoot
Package 4-XFBGA, CSPBGA
Win Source Part Number 794356-SI8435DB-T1-E1
Popularity Medium
Supply and Demand Status Limited
Family Name Si8435DB
Introduction Date August 14, 2006
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI8435DB-T1-E1 CAD Model

Description

The Vishay Siliconix Si8435DB-T1-E1 MOSFET is a member of the TrenchFET series. It comes in a 4-XFBGA, CSPBGA package and operates in a temperature range of -55°C to 150°C.

  • Maximum Continuous Drain Current: 10A
  • Maximum Power Dissipation: 2.78W (Ta), 6.25W (Tc)
  • Gate Charge (Qg): 35nC @ 5V
  • Input Capacitance (Ciss): 1600pF @ 10V
  • Maximum Vgs: ±5V
  • Rds On: 41 mOhm @ 1A, 4.5V
  • Suitable for use in: Discrete semiconductor products
  • Estimated EOL date: Obsolete

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