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Same model may have multiple batches, images only for reference.
SIA408DJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA408DJ-T1-GE3

Part No SIA408DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 4.5A PPAK SC70-6
Datasheet
SIA408DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 36mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 830 pF @ 15 V
Power Dissipation (Max) 3.4W (Ta), 17.9W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
Base Product Number SIA408
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 667043-SIA408DJ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIA408DJ-T1-GE3 CAD Model

Description

The SIA408DJ-T1-GE3 is a N-channel MOSFET transistor from Vishay's TrenchFET® series and is designed for various electronic applications that require a metal oxide semiconductor field-effect transistor (MOSFET).

  • Vdss: 30V
  • Id @ 25°C: 4.5A
  • Rds On @ 5.3A, 10V Vgs: 36mOhm
  • Temperature Range: -55°C to 150°C
  • Package: PowerPAK® SC-70-6
  • Mounting Type: Surface mount

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2506 $62.5300
115+ $1.0263 $118.0245
175+ $0.9941 $173.9675
245+ $0.9621 $235.7145
315+ $0.9300 $292.9500
420+ $0.8338 $350.1960
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Availability: 42,400 pieces
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