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Same model may have multiple batches, images only for reference.
SIA462DJ-T4-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA462DJ-T4-GE3

Part No SIA462DJ-T4-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIA462DJ-T4-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 15 V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-70-6 Single
Package / Case PowerPAK® SC-70-6
Base Product Number SIA462
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277517-SIA462DJ-T4-GE3
Ultra Librarian 3D Model Ultra Librarian SIA462DJ-T4-GE3 CAD Model

Description

The Vishay SIA462DJ-T4-GE3 is an N-channel MOSFET designed for use in various electronic applications.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 12A (Ta), 12A (Tc)
  • Rds On: 18mOhm @ 9A, 10V
  • Vgs(th): 2.4V @ 250µA
  • Power Dissipation: 3.5W (Ta), 19W (Tc)
  • Mounting Technology: SMD (SMT)
  • Package: PowerPAK® SC-70-6
  • Gate Charge: 17 nC @ 10 V
  • Input Capacitance: 570 pF @ 15 V
  • Maximum Vgs: ±20V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Packaging: Tape & Reel
  • Standard Package: 3,000 pcs

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