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Same model may have multiple batches, images only for reference.
SIE868DF-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIE868DF-T1-GE3

Part No SIE868DF-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIE868DF-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 20 V
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 10-PolarPAK® (L)
Package / Case 10-PolarPAK® (L)
Base Product Number SIE868
Other Names SIE868DFT1GE3,SIE868DF-T1-GE3CT,SIE868DF-T1-GE3DKR,SIE868DF-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277568-SIE868DF-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIE868DF-T1-GE3 CAD Model

Description

The Vishay Siliconix TrenchFET® SIE868DF-T1-GE3 is an N-channel MOSFET transistor.

  • Drain-to-source voltage: 40V
  • Continuous drain current: 60A @ 25°C
  • Maximum Rds On: 2.3mOhm @ 20A and 10V
  • Gate charge: 145nC @ 10V
  • Input capacitance: 6100pF @ 20V
  • Designed for: use in discrete semiconductor products
  • Package: 10-PolarPAK® (L) package
  • Temperature range: -55°C to 150°C

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