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Same model may have multiple batches, images only for reference.
SIHA22N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHA22N60E-GE3

Part No SIHA22N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL 600V / N-Channel 600 V 8A (Tc) 35W (Tc) Through Hole TO-220 Full Pack
Datasheet
SIHA22N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series EL
Package Tape & Reel (TR),Cut Tape (CT)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1920 pF @ 100 V
Power Dissipation (Max) 35W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SIHA22N60E-GE3DKR-ND,742-SIHA22N60E-GE3DKR,742-SIHA22N60E-GE3TR,742-SIHA22N60E-GE3DKRINACTIVE,742-SIHA22N60E-GE3CT
Standard Package 1,000
Win Source Part Number 1093037-SIHA22N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHA22N60E-GE3 CAD Model

Description

The electronic component with Win Source Part Number 1093037-SIHA22N60E-GE3 is a discrete semiconductor product that belongs to the Transistors - FETs, MOSFETs - Single category.

  • Win Source Part Number: 1093037-SIHA22N60E-GE3
  • Category: Transistors - FETs, MOSFETs - Single
  • Series: EL
  • Package: Tape & reel (TR), cut tape (CT)
  • Standard Package: 1,000
  • Technology: MOSFET (Metal Oxide)
  • FET Type: N-Channel
  • Maximum Drain to Source Voltage: 600 V
  • Maximum Continuous Drain Current: 8A (Tc)
  • Maximum Rds On: 180mOhm @ 11A, 10V
  • Maximum Vgs(th): 4V @ 250μA
  • Maximum Power Dissipation: 35W (Tc)
  • Mounting Type: Through hole
  • Package/Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220 Full Pack
  • Maximum Gate Charge (Qg) @ Vgs: 86 nC @ 10 V
  • Maximum Input Capacitance (Ciss) @ Vds: 1920 pF @ 100 V
  • Maximum Vgs: ±30V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • MSL Level: 1 (Unlimited)
  • ECCN: EAR99
  • HTSUS: 8541.29.0095
  • Manufacturer: Vishay Siliconix

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