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Same model may have multiple batches, images only for reference.
SIHB12N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHB12N60E-GE3

Part No SIHB12N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO263
Datasheet
SIHB12N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 58nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 937pF @ 100V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 147W (Tc)
Rds On (Maximum) @ Id, Vgs 380 mOhm @ 6A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Homepage www.vishay.com
Win Source Part Number 756572-SIHB12N60E-GE3
Family Name SiHB12N60E
Introduction Date December 07, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIHB12N60E-GE3 CAD Model

Description

The Vishay SiHB12N60E is a MOSFET transistor with a channel type of N.

  • Vgs (max): ±30V
  • Continuous Drain Current: 12A (Tc)
  • Power Dissipation: 147W (Tc)
  • Rds On (max): 380 mOhm @ 6A, 10V
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting Style: Surface Mount
  • Operating Temperature: -55°C to 150°C
  • Popularity: High
  • Supply and Demand Status: Limited
  • Halogen-Free Compliant: Yes
  • Estimated EOL Date: 2026
  • Common Applications: Industrial and power management

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