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Same model may have multiple batches, images only for reference.
SIHP25N50E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP25N50E-GE3

Part No SIHP25N50E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 26A TO220AB  /  N-Channel 500 V 26A (Tc) 250W (Tc) Through Hole TO-220AB
Datasheet
SIHP25N50E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1980 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP25
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1219050-SIHP25N50E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP25N50E-GE3 CAD Model

Description

The SIHP25N50E-GE3 N-Channel MOSFET is designed for use in single transistor applications.

  • Drain to Source Voltage: 500V
  • Continuous Drain Current: 26A @ 25°C
  • Maximum Rds On: 145mOhm @ 12A and 10V
  • Maximum Vgs(th): 4V @ 250μA
  • Maximum Power Dissipation: 250W @ Tc
  • Mounting: Through Hole
  • Package: TO-220-3
  • Supplier Device Package: TO-220AB
  • Gate Charge: 86 nC @ 10V
  • Input Capacitance: 1980 pF @ 100Vds
  • Manufacturer: Vishay Siliconix
  • Base Product Number: SIHP25
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

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