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Same model may have multiple batches, images only for reference.
SQJQ480E-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJQ480E-T1_GE3

Part No SQJQ480E-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQJQ480E-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 144 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8625 pF @ 25 V
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 8 x 8
Package / Case PowerPAK® 8 x 8
Base Product Number SQJQ480
Other Names SQJQ480E-T1_GE3DKR,SQJQ480E-T1_GE3CT,SQJQ480E-T1_GE3TR
Standard Package 2,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277848-SQJQ480E-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJQ480E-T1_GE3 CAD Model

Description

The Vishay Siliconix SQJQ480E-T1_GE3 is a high-quality N-Channel MOSFET transistor that is part of the Automotive, AEC-Q101, TrenchFET® series.

  • Drain to Source Voltage (Vdss): 80 V
  • Continuous Drain Current (Id): 150A (Tc)
  • On-Resistance (Rds On): 3mOhm @ 20A, 10V
  • Gate Charge (Qg): 144 nC @ 10 V
  • Operating Temperature Range: -55°C ~ 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.2900 $52.6400
38+ $2.6995 $102.5810
58+ $2.6152 $151.6816
80+ $2.5308 $202.4640
103+ $2.4464 $251.9792
137+ $2.1934 $300.4958
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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