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Same model may have multiple batches, images only for reference.
SUD23N06-31-T4-GE3 Real Image
Same model may have multiple batches, images only for reference.

SUD23N06-31-T4-GE3

Part No SUD23N06-31-T4-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 21.4A TO252
Datasheet
SUD23N06-31-T4-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 21.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 670pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.7W (Ta), 31.25W (Tc)
Maximum Rds On at Id,Vgs 31 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1104087-SUD23N06-31-T4-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUD23N06-31-T4-GE3 CAD Model

Description

The Vishay SUD23N06-31-T4-GE3 is an N-channel MOSFET component with a drain-source breakdown voltage of 60V.

  • Continuous Drain Current @ 25°C: 21.4A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 17nC @ 10V
  • Maximum Input Capacitance: 670pF @ 25V
  • Maximum Rds On @ Id,Vgs: 31 mOhm @ 15A, 10V
  • Package: TO-252, (D-Pak)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: balanced
  • Application: discrete semiconductor products

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155+ $0.7546 $116.9630
240+ $0.7310 $175.4400
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425+ $0.6839 $290.6575
570+ $0.6131 $349.4670
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