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Same model may have multiple batches, images only for reference.
VQ1001P-2
Same model may have multiple batches, images only for reference.

VQ1001P-2

Part No VQ1001P-2
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 4N-CH 30V 0.83A 14DIP / Trans MOSFET N-CH 30V 0.83A 14-Pin PDIP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Part Status Obsolete(EOL)
FET Type 4 N-Channel
FET Feature Logic Level Gate
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 830mA
Rds On (Maximum) @ Id, Vgs 1.75 Ohm @ 200mA, 5V
Vgs(th) (Maximum) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Maximum) @ Vds 110pF @ 15V
Power - Max 2W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package 14-DIP
Win Source Part Number 799188-VQ1001P-2
Popularity Medium
Supply and Demand Status Limited
Family Name VQ1001P
Introduction Date August 07, 2001
ECCN EAR99
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian VQ1001P-2 CAD Model

Description

The Vishay Siliconix VQ1001P-2 is a 4 N-channel logic level gate FET from Vishay Siliconix.

  • Continuous Drain Current (Maximum): 830mA
  • Power: 2W
  • Drain Source Voltage: 30V
  • Vgs(th) (Maximum) @ Id: 2.5V @ 1mA
  • Input Capacitance (Ciss) (Maximum) @ Vds: 110pF @ 15V
  • Rds On (Maximum) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
  • Package: 14-DIP
  • Operating Temperature: -55°C to 150°C (TJ)

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